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| BL Galaxy Electrical PNP Silicon Epitaxial Planar Transistor FEATURES Power dissipation.(PC=150mW) Epitaxial planar die construction. Complementary to MMST3904. Also available in lead free version. Production specification MMST3906 Pb Lead-free APPLICATIONS General purpose application and switching application. SOT-323 ORDERING INFORMATION Type No. MMST3906 Marking K5N Package Code SOT-323 MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol VCBO VCEO VEBO IC PC Tj,Tstg Parameter Collector-Base Voltage Value -40 Units V Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous -40 -5 -200 V V mA Collector Dissipation Junction and Storage Temperature 150 -55~150 mW ELECTRICAL CHARACTERISTICS @ Ta=25 unless otherwise specified Document number: BL/SSSTF052 Rev.A www.galaxycn.com 1 BL Galaxy Electrical PNP Silicon Epitaxial Planar Transistor Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO Test conditions IC=-10A,IE=0 IC=-1mA,IB=0 IE=-10A,IC=0 VCB=-30V,IE=0 VEB=-5V,IC=0 VCE=-1V,IC=-0.1mA VCE=-1V,IC=-1mA VCE=-1V,IC=-10mA VCE=-1V,IC=-50mA VCE=-1V,IC=-100mA IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA VCE=-20V,IC= -10mA, f=100MHz VCB=-5V,IE=0,f=1MHz VCB=-5V,IE=0,f=1MHz VCE=-5V,IC=-0.1mA, f=1KHz,Rs=1K VCC=-3V,VBE=-0.5V, IC=-10mA,IB1=-1mA Production specification MMST3906 MIN -40 -40 -5 -0.05 -0.05 60 80 100 60 30 TYP MAX UNIT V V V A A DC current gain hFE 300 Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Collector input capacitance Noise figure Delay time Rise time Storage time Fall time VCE(sat) VBE(sat) fT Cobo Ciob NF td tr ts tf -0.25 -0.4 -0.65 -0.85 -0.95 V V MHz 250 4.5 10 4 35 35 225 75 pF pF dB nS nS nS nS VCC=-3V,IC=-10mA, IB1=IB2=-1mA TYPICAL CHARACTERISTICS @ Ta=25 unless otherwise specified Document number: BL/SSSTF052 Rev.A www.galaxycn.com 2 BL Galaxy Electrical PNP Silicon Epitaxial Planar Transistor Production specification MMST3906 Document number: BL/SSSTF052 Rev.A www.galaxycn.com 3 BL Galaxy Electrical PNP Silicon Epitaxial Planar Transistor PACKAGE OUTLINE Plastic surface mounted package Production specification MMST3906 SOT-323 SOT-323 Dim A B C D E G H J K Min 1.8 1.15 0.15 0.25 1.2 0.02 2.1 Max 2.2 1.35 0.35 0.40 1.4 0.1 2.3 1.0Typical 0.1Typical All Dimensions in mm PACKAGE INFORMATION Device MMST3906 Package SOT-323 Shipping 3000/Tape&Reel Document number: BL/SSSTF052 Rev.A www.galaxycn.com 4 |
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